Industrial Flash Memory
DOM USB 32GB pSLC
Ref.Mozaïk Storage : PMS-4117
The SFUI032GK1AE2TO-C-LT-2AP-STD, part of the series U-56 Series everbit by Swissbit AG, is offered in various capacities and temperature ranges. Please feel free to get in touch with us:
Description
- Ref.Manufacturer : SFUI032GK1AE2TO-C-LT-2AP-STD
- Series : U-56 Series everbit
- Manufacturer : Swissbit AG
- Operating temp. : 0°C ~ +70°C
- Form factor : 2.00mm pitch
Product specifications
- Manufacturer Swissbit AG
- Manufacturer reference number SFUI032GK1AE2TO-C-LT-2AP-STD
- Sub category DOM
- Interface USB 2.0
- Flash type pSLC
- Form factor 2.00mm pitch
- Capacity 32 GB
- Endurance P/E Cycle (max.) 20 000 P/E cycles
- Read Sequential (max.) 175 MB/s
- Write Sequential (max.) 110 MB/s
- TBW (max.) 651 TB
- MTBF 3 000 000 hours
- S.M.A.R.T. functionalities Yes
- PowerProtector Yes
- Operating temperature 0°C ~ +70°C
- Storage temperature -40°C ~ +85°C
- Chipset Industrial Grade
- Power 3.3 V5.0 V
- Vibrations 50G
- Chocs 1500G
- Additional information USB3.1 solid state flash drive for internal 9(10)-pin USB connector terminal Compliant with USB specification 3.1 Gen 1 (SuperSpeed 5Gb/s burst) Backward compliant with USB 2.0/1.1 systems (High/Full Speed - 480/12Mb/s burst) 2.54mm or 2.00mm connector with keyed pin9 Mounting hole electrically not connected (optional grounded) Fixed drive (USB hard drive - optional removable) LED for operation indication Write protect switch (optional) Diagnostic features with Life Time Monitoring tool support Firmware update in field possible Up to 1100 IOPS write and 3200 IOPS read (4KByte transfers) Up to 110 MBytes/s sequential write and 175 MBytes/s read speed Power Supply: (Low-power CMOS technology) 3.1 to 5.5V operating voltage Optimized FW algorithms especially for high read access and long data retention applications Patented power-off reliability technology Near Miss ECC technology Minimizes the risk of uncorrectable bit failure over the product life time. Each read command analyzes the ECC margin level and refreshes data if necessary. Read Disturb Management The read commands per block are monitored and the content is refreshed when critical levels are reached. Wear Leveling technology Equal wear leveling of static and dynamic data. The wear leveling assures that dynamic data as well as static data is balanced evenly across the memory. As a result the maximum write endurance of the device is guaranteed. Data Care Management The interruptible background process maintains the user data integrity by compensating Read Disturb effects or Retention degradation due to high temperature effects. UBER <10-16 High reliability Pseudo SLC Flash with 20000 Program/Erase Cycles and everbit Reduced Write Amplification Designed with sophisticated firmware architecture for industrial and NetCom market especially 24/7 application like networking - base
- Certificates EMC/ CE / FCC / RoHS / WEEE/ REACh
- Weight 5 g
- Dimensions 36.8mm x 26.65mm
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