Industrial Flash Memory

DOM USB 4GB pSLC

Ref.Mozaïk Storage : PMS-4118

The SFUI4096J1AE1TO-I-GS-2AP-STD, part of the series U-56 Series everbit by Swissbit AG, is offered in various capacities and temperature ranges. Please feel free to get in touch with us:

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Description

Ref.Manufacturer : SFUI4096J1AE1TO-I-GS-2AP-STD
Series : U-56 Series everbit
Manufacturer : Swissbit AG
Operating temp. : -40°C ~ +85°C
Form factor : 2.54mm pitch

Product specifications

Manufacturer Swissbit AG
Manufacturer reference number SFUI4096J1AE1TO-I-GS-2AP-STD
Sub category DOM
Interface USB 2.0
Flash type pSLC
Form factor 2.54mm pitch
Capacity 4 GB
Endurance P/E Cycle (max.) 20 000 P/E cycles
Read Sequential (max.) 95 MB/s
Write Sequential (max.) 56 MB/s
TBW (max.) 83 TB
MTBF 3 000 000 hours
S.M.A.R.T. functionalities Yes
PowerProtector Yes
Operating temperature -40°C ~ +85°C
Storage temperature -40°C ~ +85°C
Chipset Industrial Grade
Power 3.3 V
5.0 V
Vibrations 50G
Chocs 1500G
Additional information USB3.1 solid state flash drive for internal 9(10)-pin USB connector terminal
Compliant with USB specification 3.1 Gen 1 (SuperSpeed
5Gb/s burst)
Backward compliant with USB 2.0/1.1 systems (High/Full Speed - 480/12Mb/s burst)
2.54mm or 2.00mm connector with keyed pin9
Mounting hole electrically not connected (optional grounded)
Fixed drive (USB hard drive - optional removable)
LED for operation indication
Write protect switch (optional)
Diagnostic features with Life Time Monitoring tool support
Firmware update in field possible
Up to 1100 IOPS write and 3200 IOPS read (4KByte transfers)
Up to 110 MBytes/s sequential write and 175 MBytes/s read speed
Power Supply: (Low-power CMOS technology)
3.1 to 5.5V operating voltage
Optimized FW algorithms especially for high read access and long data retention applications Patented power-off reliability technology
Near Miss ECC technology
Minimizes the risk of uncorrectable bit failure over the product life time. Each read command analyzes the ECC margin level and refreshes data if necessary.
Read Disturb Management
The read commands per block are monitored and the content is refreshed when critical levels are reached.
Wear Leveling technology
Equal wear leveling of static and dynamic data. The wear leveling assures that dynamic data as well as static data is balanced evenly across the memory. As a result
the maximum write endurance of the device is guaranteed.
Data Care Management
The interruptible background process maintains the user data integrity by compensating Read Disturb effects or Retention degradation due to high temperature effects.
UBER <10-16
High reliability
Pseudo SLC Flash with 20
000 Program/Erase Cycles and everbit Reduced Write Amplification Designed with sophisticated firmware architecture for industrial and NetCom market especially 24/7 application like networking - base
Certificates EMC/ CE / FCC / RoHS / WEEE/ REACh
Weight 5 g
Dimensions 36.8mm x 26.65mm