Industrial Flash Memory

DOM USB 8GB SLC

Ref.Mozaïk Storage : PMS-4156

The SFUI008GJ1AE1TO-C-DB-2B1-STD, part of the series U-500 Series by Swissbit AG, is offered in various capacities and temperature ranges. Please feel free to get in touch with us:

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Description

Ref.Manufacturer : SFUI008GJ1AE1TO-C-DB-2B1-STD
Series : U-500 Series
Manufacturer : Swissbit AG
Operating temp. : 0°C ~ +70°C
Form factor : 2.54mm pitch

Product specifications

Manufacturer Swissbit AG
Manufacturer reference number SFUI008GJ1AE1TO-C-DB-2B1-STD
Sub category DOM
Interface USB 3.1
Flash type SLC
Form factor 2.54mm pitch
Capacity 8 GB
Read Sequential (max.) 163 MB/s
Write Sequential (max.) 70 MB/s
TBW (max.) 806 TB
MTBF 3 000 000 hours
S.M.A.R.T. functionalities Yes
PowerProtector Yes
Operating temperature 0°C ~ +70°C
Storage temperature -40°C ~ +85°C
Chipset Industrial Grade
Power 3.3 V
5.0 V
Vibrations 50G
Chocs 1500G
Additional information USB3.1 solid state flash drive for internal 9(10)-pin USB connector terminal
Fully compliant with USB specification 3.1 Gen 1 (SuperSpeed
5Gb/s burst)
Fully backward compliant with USB 2.0/1.1 systems (High/Full Speed - 480/12Mb/s burst)
Dimension of 26.65 x 36.8mm
2.54mm or 2.00mm connector with keyed pin9
Mounting hole electrically not connected (optional grounded)
Fixed drive (USB hard drive - optional removable)
LED for operation indication
Write protect switch (optional)
Diagnostic features with Life Time Monitoring tool support
Firmware update in field possible
High performance USB3.1 specification
Up to 1100 IOPS write and 3000 IOPS read (4KByte transfers)
Up to 90 MBytes/s sequential write and 175 MBytes/s read speed
Power Supply: (Low-power CMOS technology)
3.1 to 5.5V operating voltage
Optimized FW algorithms especially for high read access and long data retention applications
Patented power-off reliability technology
Near Miss ECC technology
Minimizes the risk of uncorrectable bit failure over the product life time. Each read command analyzes the ECC margin level and refreshes data if necessary.
Read Disturb Management
The read commands per block are monitored and the content is refreshed when critical levels are reached.
Wear Leveling technology
Equal wear leveling of static and dynamic data. The wear leveling assures that dynamic data as well as static data is balanced evenly across the memory. As a result the maximum write endurance of the device is guaranteed.
Data Care Management
The interruptible background process maintains the user data integrity by compensating Read Disturb effects or Retention degradation due to high temperature effects.
UBER <10-17
High reliability
SLC NAND Flash with highest program erase cycles per block
Certificates EMC/ CE / FCC / RoHS / WEEE/ REACh
Weight 5 g
Dimensions 36.8mm x 26.65mm