Industrial Flash Memory

DOM USB 8GB SLC

Ref.Mozaïk Storage : PMS-4176

The SFUI008GK1AE1TO-I-DB-2B1-STD, part of the series U-500 Series by Swissbit AG, is offered in various capacities and temperature ranges. Please feel free to get in touch with us:
Description
  • Ref.Manufacturer : SFUI008GK1AE1TO-I-DB-2B1-STD
  • Series : U-500 Series
  • Manufacturer : Swissbit AG
  • Operating temp. : -40°C ~ +85°C
  • Form factor : 2.00mm pitch

Product specifications

  • Manufacturer Swissbit AG
  • Manufacturer reference number SFUI008GK1AE1TO-I-DB-2B1-STD
  • Sub category DOM
  • Interface USB 3.1
  • Flash type SLC
  • Form factor 2.00mm pitch
  • Capacity 8 GB
  • Read Sequential (max.) 163 MB/s
  • Write Sequential (max.) 70 MB/s
  • TBW (max.) 806 TB
  • MTBF 3 000 000 hours
  • S.M.A.R.T. functionalities Yes
  • PowerProtector Yes
  • Operating temperature -40°C ~ +85°C
  • Storage temperature -40°C ~ +85°C
  • Chipset Industrial Grade
  • Power 3.3 V
    5.0 V
  • Vibrations 50G
  • Chocs 1500G
  • Additional information USB3.1 solid state flash drive for internal 9(10)-pin USB connector terminal
    Fully compliant with USB specification 3.1 Gen 1 (SuperSpeed
    5Gb/s burst)
    Fully backward compliant with USB 2.0/1.1 systems (High/Full Speed - 480/12Mb/s burst)
    Dimension of 26.65 x 36.8mm
    2.54mm or 2.00mm connector with keyed pin9
    Mounting hole electrically not connected (optional grounded)
    Fixed drive (USB hard drive - optional removable)
    LED for operation indication
    Write protect switch (optional)
    Diagnostic features with Life Time Monitoring tool support
    Firmware update in field possible
    High performance USB3.1 specification
    Up to 1100 IOPS write and 3000 IOPS read (4KByte transfers)
    Up to 90 MBytes/s sequential write and 175 MBytes/s read speed
    Power Supply: (Low-power CMOS technology)
    3.1 to 5.5V operating voltage
    Optimized FW algorithms especially for high read access and long data retention applications
    Patented power-off reliability technology
    Near Miss ECC technology
    Minimizes the risk of uncorrectable bit failure over the product life time. Each read command analyzes the ECC margin level and refreshes data if necessary.
    Read Disturb Management
    The read commands per block are monitored and the content is refreshed when critical levels are reached.
    Wear Leveling technology
    Equal wear leveling of static and dynamic data. The wear leveling assures that dynamic data as well as static data is balanced evenly across the memory. As a result the maximum write endurance of the device is guaranteed.
    Data Care Management
    The interruptible background process maintains the user data integrity by compensating Read Disturb effects or Retention degradation due to high temperature effects.
    UBER <10-17
    High reliability
    SLC NAND Flash with highest program erase cycles per block
  • Certificates EMC/ CE / FCC / RoHS / WEEE/ REACh
  • Weight 5 g
  • Dimensions 36.8mm x 26.65mm

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